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| DAP222, DAP202U Preferred Device Common Anode Silicon Dual Switching Diodes These Common Anode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. The DAP222 device is housed in the SC-75/SOT-416 package which is designed for low power surface mount applications, where board space is at a premium. The DAP202U device is housed in the SC-70/SOT-323 package. Features http://onsemi.com ANODE 3 * Fast trr * Low CD * Pb-Free Packages are Available 1 2 CATHODE MAXIMUM RATINGS (TA = 25C) Rating Reverse Voltage Peak Reverse Voltage Forward Current Peak Forward Current Peak Forward Surge Current Symbol VR VRM IF IFM IFSM(1) Value 80 80 100 300 2.0 Unit Vdc Vdc mAdc mAdc Adc 1 Symbol PD TJ Tstg Max 150 150 -55 ~ + 150 Unit mW C C 2 1 3 2 MARKING DIAGRAMS SC-75 CASE 463 STYLE 4 1 3 SC-70 CASE 419 1 P9 M G G THERMAL CHARACTERISTICS Rating Power Dissipation Junction Temperature Storage Temperature NB M G G Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. P9, NB = Device Codes M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and/or orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device DAP222 DAP222G DAP202U DAP202UG DAP222T1 DAP222T1G Package SC-75 SC-75 (Pb-Free) SC-70 SC-70 (Pb-Free) SC-75 SC-75 (Pb-Free) Shipping 3000 / Tape & Reel 3000 / Tape & Reel 3000 / Tape & Reel 3000 / Tape & Reel 3000 / Tape & Reel 3000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2005 1 October, 2005 - Rev. 5 Publication Order Number: DAP222/D DAP222, DAP202U ELECTRICAL CHARACTERISTICS (TA = 25C) Characteristic Reverse Voltage Leakage Current Forward Voltage Reverse Breakdown Voltage Diode Capacitance Reverse Recovery Time 1. 2. 3. DAP222 DAP202U Symbol IR VF VR CD trr(2) ttt(3) Condition VR = 70 V IF = 100 mA IR = 100 mA VR = 6.0 V, f = 1.0 MHz IF = 5.0 mA, VR = 6.0 V, RL = 100 W, Irr = 0.1 IR IF = 5.0 mA, VR = 6.0 V, RL = 50 W, Irr = 0.1 IR Min - - 80 - - - Max 0.1 1.2 - 3.5 4.0 10.0 Unit mAdc Vdc Vdc pF ns t = 1 mS trr Test Circuit for DAP222 in Figure 4. trr Test Circuit for DAP202U in Figure 5. TYPICAL ELECTRICAL CHARACTERISTICS 100 IF, FORWARD CURRENT (mA) TA = 85C 10 TA = -40C IR , REVERSE CURRENT (A) 10 TA = 150C TA = 125C 1.0 0.1 TA = 85C TA = 55C 1.0 TA = 25C 0.01 TA = 25C 0 10 20 30 40 VR, REVERSE VOLTAGE (VOLTS) 50 0.1 0.2 0.4 0.6 0.8 1.0 VF, FORWARD VOLTAGE (VOLTS) 1.2 0.001 Figure 1. Forward Voltage Figure 2. Reverse Current 1.75 CD, DIODE CAPACITANCE (pF) 1.5 1.25 1.0 0.75 0 2 4 6 8 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Diode Capacitance http://onsemi.com 2 DAP222, DAP202U tr tp t 10% IF trr t A RL 90% VR tp = 2 ms tr = 0.35 ns Irr = 0.1 IR IF = 5.0 mA VR = 6 V RL = 100 W RECOVERY TIME EQUIVALENT TEST CIRCUIT INPUT PULSE OUTPUT PULSE Figure 4. Reverse Recovery Time Test Circuit for the DAP222 tr tp t 10% IF trr t A RL 90% VR tp = 2 ms tr = 0.35 ns Irr = 0.1 IR IF = 5.0 mA VR = 6 V RL = 100 W RECOVERY TIME EQUIVALENT TEST CIRCUIT INPUT PULSE OUTPUT PULSE Figure 5. Reverse Recovery Time Test Circuit for the DAP202U http://onsemi.com 3 DAP222, DAP202U PACKAGE DIMENSIONS SC-75 (SOT-416) CASE 463-01 ISSUE F -E- 2 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS MIN NOM MAX 0.70 0.80 0.90 0.00 0.05 0.10 0.15 0.20 0.30 0.10 0.15 0.25 1.55 1.60 1.65 0.70 0.80 0.90 1.00 BSC 0.10 0.15 0.20 1.50 1.60 1.70 INCHES NOM MAX 0.031 0.035 0.002 0.004 0.008 0.012 0.006 0.010 0.063 0.067 0.031 0.035 0.04 BSC 0.004 0.006 0.008 0.061 0.063 0.065 MIN 0.027 0.000 0.006 0.004 0.059 0.027 e 1 -D- b 3 PL 0.20 (0.008) M D HE 0.20 (0.008) E DIM A A1 b C D E e L HE C A L A1 STYLE 4: PIN 1. CATHODE 2. CATHODE 3. ANODE SOLDERING FOOTPRINT* 0.356 0.014 1.803 0.071 0.787 0.031 0.508 0.020 1.000 0.039 SCALE 10:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 4 DAP222, DAP202U PACKAGE DIMENSIONS SC-70 (SOT-323) CASE 419-04 ISSUE M D e1 3 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. HE 1 2 E b e A 0.05 (0.002) A2 L c DIM A A1 A2 b c D E e e1 L HE MIN 0.80 0.00 0.30 0.10 1.80 1.15 1.20 2.00 MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.7 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.425 REF 2.10 2.40 MIN 0.032 0.000 0.012 0.004 0.071 0.045 0.047 0.079 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.017 REF 0.083 MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055 0.095 A1 SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 1.9 0.075 0.9 0.035 0.7 0.028 SCALE 10:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 5 DAP222/D |
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